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1

Reliability aspects of gate oxide under ESD pulse stress

Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran Chatty, Robert Gauthier, Alain Bravaix

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 1.38 MB

english, 2009

2

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent, M. Varrot, P. Mortini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 401 KB

english, 1999

3

A thorough investigation of MOSFETs NBTI degradation

V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, E. Vincent

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 600 KB

english, 2005

4

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. Parthasarathy, F. Perrier, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 529 KB

english, 2005

5

Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes

Huard, V., Parthasarathy, C.R., Bravaix, A., Hugel, T., Guerin, C., Vincent, E.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 1.75 MB

english, 2007

6

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

Y. Rey-Tauriac, J. Badoc, B. Reynard, R.A. Bianchi, D. Lachenal, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 568 KB

english, 2005

7

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim, A Bravaix, D Vuillaume, M Varrot, N Revil, P Mortini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

8

The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs

Guerin, ChloÉ, Huard, Vincent, Bravaix, Alain

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 644 KB

english, 2007

9

Hot-carrier injections in SiO2

D Vuillaume, A Bravaix, D Goguenheim

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 473 KB

english, 1998

10

[IEEE 2016 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2016.10.9-2016.10.13)] 2016 IEEE International Integrated Reliability Workshop (IIRW) - Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes

Ndiaye, C., Huard, V., Bertholon, R., Rafik, M., Federspiel, X., Bravaix, A.

Year:

2016

File:

PDF, 747 KB

2016

11

[IEEE Proceedings of the 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (2006.07.3-2006.07.7)] 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Hot-Carrier Reliability of NLDEMOS in 0.13μm SOI CMOS Technology

Lachenal, D., Rey-Tauriac, Y., Boissonnet, L., Reynard, B., Bravaix, A.

Year:

2006

Language:

english

File:

PDF, 3.63 MB

english, 2006

12

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 362 KB

english, 1999

13

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

Denais, M., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Revil, N., Bravaix, A.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 501 KB

english, 2004

14

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 467 KB

english, 2004

15

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, J.M Moragues, P Lambert, P Boivin

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 233 KB

english, 2000

16

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage

Bravaix, A., Randriamihaja, Y. Mamy, Huard, V., Angot, D., Federspiel, X., Arfaoui, W., Mora, P., Cacho, F., Saliva, M., Besset, C., Renard, S., Roy, D., Vincent, E.

Year:

2013

Language:

english

File:

PDF, 510 KB

english, 2013

17

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 401 KB

2001

18

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

C. Trapes, D. Goguenheim, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 134 KB

english, 2005

19

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Energy-driven Hot-Carrier model in advanced nodes

Arfaoui, W., Federspiel, X., Mora, P., Monsieur, F., Cacho, F., Roy, D., Bravaix, A.

Year:

2014

Language:

english

File:

PDF, 347 KB

english, 2014

20

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Vuillaume, D., Marchetaux, J.-C., Lippens, P.-E., Bravaix, A., Boudou, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 946 KB

english, 1993

21

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes

Ndiaye, C., Berthelon, R., Huard, V., Bravaix, A., Diouf, C., Andrieu, F., Ortolland, S., Rafik, M., Lajmi, R., Federspiel, X., Cacho, F.

Year:

2017

Language:

english

File:

PDF, 541 KB

english, 2017

22

Hot-carrier damage from high to low voltage using the energy-driven framework

C. Guerin, V. Huard, A. Bravaix

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 670 KB

english, 2007

23

Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics

F. Molière, B. Foucher, P. Perdu, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

24

Hot-Carrier degradation in P- and N-channel EDMOS for smart power application

Li, Shuang, Bravaix, Alain, Kussener, Edith, Ney, David, Federspiel, Xavier, Cacho, Florian

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 807 KB

2020

25

Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies

A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 163 KB

english, 2003

26

The Energy-Driven Hot Carrier Degradation Modes of nMOSFETs

Guerin, C., Huard, V., Bravaix, A.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 644 KB

english, 2009

27

[IEEE 2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS) - Sant Feliu de Guixols, Spain (2016.7.4-2016.7.6)] 2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS) - Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes

Bravaix, A., Saliva, M., Cacho, F., Federspiel, X., Ndiaye, C., Mhira, S., Kussener, E., Pauly, E., Huard, V.

Year:

2016

Language:

english

File:

PDF, 414 KB

english, 2016

28

[IEEE 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Anaheim, CA, USA (2007.09.16-2007.09.21)] 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reliability aspects of gate oxide under ESD pulse stress

Ille, Adrien, Stadler, Wolfgang, Pompl, Thomas, Gossner, Harald, Brodbeck, Tilo, Esmark, Kai, Riess, Philipp, Alvarez, David, Chatty, Kiran, Gauthier, Robert, Bravaix, Alain

Year:

2007

Language:

english

File:

PDF, 1.09 MB

english, 2007

29

Ultra-thin gate oxide reliability in the ESD time domain

Ille, a., Stadler, W., Kerber, a., Pompl, T., Brodbeck, T., Esmark, K., Bravaix, a.

Journal:

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Year:

2006

Language:

english

File:

PDF, 2.92 MB

english, 2006

30

[IEEE 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Bangalore, India (2007.07.11-2007.07.13)] 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - New Hot-Carrier Lifetime Technique for High- to Low-Supplied Voltage nMOSFETs

Guerin, C., Parthasarathy, C., Huard, V., Bravaix, A.

Year:

2007

Language:

english

File:

PDF, 3.58 MB

english, 2007

31

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies

D. Goguenheim, A. Bravaix, S. Gomri, J.M. Moragues, C. Monserie, N. Legrand, P. Boivin

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 481 KB

english, 2005

32

[IEEE 2003 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (20-23 Oct. 2003)] IEEE International Integrated Reliability Workshop Final Report, 2003 - Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide

Denais, M., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Revil, N., Bravaix, A.

Year:

2003

Language:

english

File:

PDF, 369 KB

english, 2003

33

[IEEE 1999 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (18-21 Oct. 1999)] 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) - Hot-carrier degradation evolution in deep submicrometer CMOS technologies

Year:

1999

Language:

english

File:

PDF, 959 KB

english, 1999

34

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Randriamihaja, Y. M., Federspiel, X., Huard, V., Bravaix, A., Palestri, P.

Year:

2013

Language:

english

File:

PDF, 799 KB

english, 2013

35

[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction

Guerin, C., Huard, V., Bravaix, A., Denais, M.

Year:

2006

Language:

english

File:

PDF, 4.21 MB

english, 2006

36

[IEEE 2005 IEEE International Integrated Reliability Workshop - S. Lake Tahoe, CA, USA (17-20 Oct. 2005)] 2005 IEEE International Integrated Reliability Workshop - Lifetime prediction of ultra-thin gate oxide PMOSFETs submitted to Hot Hole injections

Di Gilio, T., Bravaix, A.

Year:

2005

Language:

english

File:

PDF, 1.16 MB

english, 2005

37

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology

Saliva, M., Cacho, F., Ndiaye, C., Huard, V., Angot, D., Bravaix, A., Anghel, L.

Year:

2015

Language:

english

File:

PDF, 484 KB

english, 2015

38

Microscopic scale characterization and modeling of transistor degradation under HC stress

Yoann Mamy Randriamihaja, V. Huard, X. Federspiel, A. Zaka, P. Palestri, D. Rideau, D. Roy, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.60 MB

english, 2012

39

Designing in reliability in advanced CMOS technologies

C.R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guerin, F. Perrier, E. Vincent, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 765 KB

english, 2006

40

[IEEE 2006 IEEE International Conference on IC Design and Technology - Padova, Italy ()] 2006 IEEE International Conference on IC Design and Technology - Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective

Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Vincent, E., Bravaix, A.

Year:

2006

Language:

english

File:

PDF, 8.01 MB

english, 2006

41

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Bias temperature instability and hot carrier circuit ageing simulations specificities in UTBB FDSOI 28nm node

Angot, D., Huard, V., Federspiel, X., Cacho, F., Bravaix, A.

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

42

Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs

A. Bravaix, D. Vuillaume

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 995 KB

english, 1997

43

Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 232 KB

english, 2001

44

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

Bravaix, A., Guerin, C., Huard, V., Roy, D., Roux, J.M., Vincent, E.

Year:

2009

Language:

english

File:

PDF, 872 KB

english, 2009

45

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node

Bravaix, A., Guerin, C., Goguenheim, D., Huard, V., Roy, D., Besset, C., Renard, S., Randriamihaja, Y. Mamy, Vincent, E.

Year:

2010

Language:

english

File:

PDF, 590 KB

english, 2010

46

Temperature and field dependence of stress induced leakage currents in very thin (

Didier Goguenheim, Alain Bravaix, Bouchra Ananou, Céline Trapes, Francois Mondon, Gilles Reimbold

Journal:

Journal of Non-Crystalline Solids

Year:

2001

Language:

english

File:

PDF, 503 KB

english, 2001

47

[IEEE 2005 IEEE International Integrated Reliability Workshop - S. Lake Tahoe, CA, USA (17-20 Oct. 2005)] 2005 IEEE International Integrated Reliability Workshop - Combined effect of NBTI and Channel Hot Carrier effects in pMOSFETs

Guerin, C., Huard, V., Bravaix, A., Denais, M., Roux, J.M., Perrier, F., Baks, W.

Year:

2005

Language:

english

File:

PDF, 1.68 MB

english, 2005

48

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology

Mamy Randriamihaja, Y., Garetto, D., Huard, V., Rideau, D., Roy, D., Rafik, M., Bravaix, A.

Year:

2012

Language:

english

File:

PDF, 820 KB

english, 2012

49

Degradation mechanism understanding of NLDEMOS SOI in RF applications

D. Lachenal, A. Bravaix, F. Monsieur, Y. Rey-Tauriac

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 333 KB

english, 2007

50

Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection

Céline Trapes, Didier Goguenheim, Alain Bravaix

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 263 KB

english, 2003

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